The interfaces if the dipole moments of the two materials are different. The c-direction, as one would do to make a heterojunction laser or similar device, charges form at Both III-nitrides and ZnIV-nitrides have a built in dipole moment in the c-direction. Zn-IV-nitrides can be alloyed to tune the bandgap between those of the pure unalloyed materials,īut they are grown primarily from cheaper, more abundant materials. The Zn-IV-nitrides have not been studied as much as their III-nitride counterparts ,Įven though they have some potential advantages over the III-nitrides. ZnGeN2 is the analogue of GaN, ZnSiN2 is the analogue of In this way each nitrogen atom is surrounded by two group II atoms and two group IVĪtoms and the octet rule is satisfied. Sublattice of the wurtzite structure with an ordered sublattice of equal parts group II and group Conceptually, this new family is created by replacing the group III The Zn-IV-N2 family of semiconductors is a structural and electronic analogue to the IIIN family of semiconductors. The emergence of phonon density-of-states features. The degree of disorder on theĬation sublattice was observed to correlate with the suppression of predicted Raman peaks and Over the range explored, to the Zn and NH3 partial pressures. Powder x-ray diffraction and was found to be sensitive to the growth temperature and insensitive, The Zn-Ge sublattice with growth temperature and Zn partial pressure was investigated by The semiconductor ZnGeN2 was grown by a vapor-liquid-solid mechanism. Physics Department, Case Western Reserve University, Cleveland, OH 44106 1493 © 2013 Materials Research SocietyĮffect of Cation Sublattice Ordering on Structure and Raman Scattering of ZnGeN2Įric Blanton, Keliang He, Jie Shan, Kathleen Kash
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